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STPS8L30 数据表(PDF) 3 Page - STMicroelectronics |
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STPS8L30 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() STPS8L30 Characteristics DocID5515 Rev 5 3/9 1.1 Characteristics (curves) Figure 1: Average forward power dissipation versus average forward current Figure 2: Average forward current versus ambient temperature (δ = 0.5) Figure 3: Normalized avalanche power derating versus pulse duration (Tj = 125 °C) Figure 4: Relative variation of thermal impedance junction to case versus pulse duration Figure 5: Reverse leakage current versus reverse voltage applied (typical values) Figure 6: Junction capacitance versus reverse voltage applied (typical values) P (W ) F (AV) T δ=tp/T tp I ( A ) F ( AV ) δ = 1 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 0 4 10 0.0 1.0 2.0 3.0 4.0 5.0 2 6 8 Rth(j-a) = Rth(j-c) 0 1 2 3 4 5 6 7 8 9 Rth(j-a) = 70 °C/W 0 25 50 75 100 125 150 t P (µs) 0.001 0.01 0.1 1 10 100 1000 1 P ARM (t P ) / P ARM (10 µs) Z /R th (j-c) th(j-c ) 1E-4 1E-3 1E-2 1E-1 1E+0 0.0 0.2 0.4 0.6 0.8 1.0 T δ =tp/T tp t (s ) p δ = 0.1 Single pulse δ = 0.2 δ = 0.5 0 5 10 15 20 25 30 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 3E+2 I (m A ) R V (V ) R Tj = 150 °C Tj = 25 °C Tj = 125 °C 40 100 200 500 1000 2000 C (pF) V ( V ) R F= 1 MHz V OSC = 30 mVRMS Tj = 25 °C 1 10 |
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