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ESM2012DV 数据表(PDF) 2 Page - STMicroelectronics

部件名 ESM2012DV
功能描述  NPN DARLINGTON POWER MODULE
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ESM2012DV 数据表(HTML) 2 Page - STMicroelectronics

  ESM2012DV Datasheet HTML 1Page - STMicroelectronics ESM2012DV Datasheet HTML 2Page - STMicroelectronics ESM2012DV Datasheet HTML 3Page - STMicroelectronics ESM2012DV Datasheet HTML 4Page - STMicroelectronics ESM2012DV Datasheet HTML 5Page - STMicroelectronics ESM2012DV Datasheet HTML 6Page - STMicroelectronics ESM2012DV Datasheet HTML 7Page - STMicroelectronics ESM2012DV Datasheet HTML 8Page - STMicroelectronics  
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THERMAL DATA
Rthj-ca se
Rthj-ca se
Rthc-h
Thermal Resistance Ju nction- case (transistor)
Max
Thermal Resistance Ju nction- case (diode)
Max
Thermal Resistance Case-heatsin k With Conductive
Grease Applied
Max
0.7
0.9
0.05
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER #
Collecto r Cu t-of f
Current (RBE =5
Ω)
VCE =VCEV
VCE =VCEV
Tj = 100
oC
1. 5
10
mA
mA
ICEV #
Collecto r Cu t-of f
Current (VBE =-5V)
VCE =VCEV
VCE =VCEV
Tj = 100
oC
1
7
mA
mA
IEBO #
Emitter Cut-off Current
(IC =0)
VEB =5 V
1
mA
VCEO(SUS) * Collecto r-Emitter
Sustaining Voltage
IC =5 A
L = 15 mH
Vclamp = 125 V
125
V
hFE
∗
DC Current Gain
IC = 100 A
VCE = 5 V
1200
VCE(sat)
∗ Collector-Emitter
Satu ration Vo ltage
IC =70 A
IB =0.25 A
IC =70 A
IB =0.25 A
Tj = 100
oC
IC = 100 A
IB =1 A
IC = 100 A
IB =1 A
Tj = 100
oC
1.25
1.35
1.5
1.65
1. 5
2
V
V
V
V
VBE(sat)
∗ Base-Emitter
Satu ration Vo ltage
IC = 100 A
IB =1 A
IC = 100 A
IB =1 A
Tj = 100
oC
2.3
2.35
3
V
V
diC/dt
Rateof Riseof
On-state Collector
VCC =9 0 V
RC =0
tp =3
µs
IB1 =0.5 A
Tj = 100
oC
200
230
A/
µs
VCE(3
µs)•• Collector-Emitter
Dynamic Voltage
VCC =90 V
RC =1.3
Ω
IB1 =0.5 A
Tj = 100
oC
23
V
VCE(5
µs)•• Collector-Emitter
Dynamic Voltage
VCC =90 V
RC =1.3
Ω
IB1 =0.5 A
Tj = 100
oC
1.8
2. 5
V
ts
tf
tc
Storage Time
Fall Time
Cross-over Time
IC =70 A
VCC =9 0 V
VBB =-5 V
RBB =
Ω
Vclamp = 125 V
IB1 =0.25 A
L= 60
µHTj =100 oC
0.9
0.15
0.3
2
0. 3
0. 6
µs
µs
µs
VCEW
Maximu m Collector
Emitter Voltage
With ou t Snubber
ICWoff = 120 A
IB1 =1A
VBB =-5 V
VCC =90 V
L= 60
µHRBB = 1.25 Ω
Tj =1 25
oC
125
V
VF
∗
Diod e Forward Voltage IF = 100 A
Tj =1 00
oC0.92
1
V
IRM
Reverse Recovery
Current
VCC =1 25 V
IF = 100 A
diF/dt = -200 A/
µsL < 0.05 µH
Tj =1 00
oC
10
14
A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
# See test circuits in databook introduction
To evaluate the conduction losses of the diode use the following equations:
VF = 0.66 + 0.0034 IF
P = 0.66 IF(AV) + 0.0034 I
2
F(RMS)
ESM2012DV
2/8



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