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MUX36D08IPWR 数据表(PDF) 22 Page - Texas Instruments

部件名 MUX36D08IPWR
功能描述  MUX36xxx 36-V, Low-Capacitance, Low-Leakage-Current, Precision Analog Multiplexers
PDF  52 Pages
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制造商  TI2 [Texas Instruments]
网页  https://www.ti.com
标志 TI2 - Texas Instruments

MUX36D08IPWR 数据表(HTML) 22 Page - Texas Instruments

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VDD
VDD
VSS
VSS
MUX36S16
A0
A1
A2
VEN
RS
VS
EN
S1
GND
CL
1 nF
D
VOUT
VOUT
VEN
3 V
VOUT
QINJ = CL ×
VOUT
0 V
A3
22
MUX36S16, MUX36D08
SLASED9C – NOVEMBER 2016 – REVISED OCTOBER 2019
www.ti.com
Product Folder Links: MUX36S16 MUX36D08
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
7.1.8 Charge Injection
The MUX36xxx have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS and
PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate
signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is
denoted by the symbol QINJ. Figure 33 shows the setup used to measure charge injection.
Figure 33. Charge-Injection Measurement Setup



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