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IS25LP256D-RLLA3-TR 数据表(PDF) 172 Page - Integrated Silicon Solution, Inc

部件名 IS25LP256D-RLLA3-TR
功能描述  SERIAL FLASH MEMORY WITH 166/133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE
PDF  179 Pages
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制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc

IS25LP256D-RLLA3-TR 数据表(HTML) 172 Page - Integrated Silicon Solution, Inc

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IS25LP256D
IS25WP256D
Integrated Silicon Solution, Inc.- www.issi.com
172
Rev A15
08/05/2024
9.9 PROGRAM/ERASE PERFORMANCE
Parameter
Typ
Max
Unit
Sector Erase Time (4Kbyte)
100
300
ms
Block Erase Time (32Kbyte)
0.14
0.5
s
Block Erase Time (64Kbyte)
0.17
1.0
s
Chip Erase Time
70
180
s
Page Programming Time
0.2
0.8
ms
Byte Program
8
40
µs
Note: These parameters are characterized and not 100% tested.
9.10 RELIABILITY CHARACTERISTICS
Parameter
Min
Unit
Test Method
Endurance
100,000
Cycles
JEDEC Standard A117
Data Retention
20
Years
JEDEC Standard A103
ESD
– Human Body Model
2,000
Volts
JEDEC Standard A114
ESD
– Machine Model
200
Volts
JEDEC Standard A115
Latch-Up
100 + ICC1
mA
JEDEC Standard 78
Note: These parameters are characterized and not 100% tested.



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