IS25LE512M-RHLA3:P-TY datasheet(170/189 Pages) ISSI

部件名	IS25LE512M-RHLA3:P-TY

功能描述	SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC

PDF	189 Pages

Scroll/Zoom	100%

制造商	ISSI [Integrated Silicon Solution, Inc]

网页	http://www.issi.com

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170 / 189 page

IS25LE512M

IS25WE512M

Integrated Silicon Solution, Inc.- www.issi.com

170

Rev. A6

06/16/2025

8.67 WRITE VDLR OPERATION (WRVDLR, 4Ah)

Before the Write VDLR (WRVDLR) command can be accepted by the device, a Write Enable (WREN) command

must be issued and decoded by the device. After the Write Enable (WREN) command has been decoded

successfully, the device will set the Write Enable Latch (WEL) to enable the WRVDLR operation.

The WRVDLR command (4Ah) is entered by shifting the instruction and data byte on SI.

CE# must be driven to the logic high state after the eighth (8th) bit of data has been latched. If not, the WRVDLR

command is not executed. As soon as CE# is driven to the logic high state, the WRVDLR operation is initiated

with no delays.

Figure 8.146 WRVDLR Sequence In SPI Mode

Instruction = 4Ah

CE #

SCK

Data In

Mode 3

Mode 0

High Impedence

Figure 8.147 WRVDLR Sequence In QPI Mode

4Ah

Mode 3

Mode 0

7:4

3:0

CE#

SCK

IO[3:0]

Data In

IS25LE512M-RHLA3:P-TY 数据表(PDF) 170 Page - Integrated Silicon Solution, Inc