IS25LE512M-RHLA3:P-TY datasheet(172/189 Pages) ISSI

部件名	IS25LE512M-RHLA3:P-TY

功能描述	SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC

PDF	189 Pages

Scroll/Zoom	100%

制造商	ISSI [Integrated Silicon Solution, Inc]

网页	http://www.issi.com

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172 / 189 page

IS25LE512M

IS25WE512M

Integrated Silicon Solution, Inc.- www.issi.com

172

Rev. A6

06/16/2025

8.69 WRITE ECC REGISTER OPERATION (WRECC, B5h)

Before the Write ECC Register (WRECC) command can be accepted by the device, a Write Enable (WREN)

command must be issued and decoded by the device. After the Write Enable (WREN) command has been

decoded successfully, the device will set the Write Enable Latch (WEL) to enable the WRECC operation.

The WRECC command (B5h) is entered by shifting the instruction and data byte on SI.

CE# must be driven to the logic high state after the eighth (8th) bit of data has been latched. If not, the WRECC

command is not executed. As soon as CE# is driven to the logic high state, the WRECC operation is initiated with

no delays.

Figure 8.150 WRECC Sequence In SPI Mode

Instruction = B5h

CE #

SCK

Data In

Mode 3

Mode 0

High Impedence

Figure 8.151 WRECC Sequence In QPI Mode

B5h

Mode 3

Mode 0

7:4

3:0

CE#

SCK

IO[3:0]

Data In

IS25LE512M-RHLA3:P-TY 数据表(PDF) 172 Page - Integrated Silicon Solution, Inc