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IS25LE512M-RHLA3:P-TY 数据表(PDF) 176 Page - Integrated Silicon Solution, Inc

部件名 IS25LE512M-RHLA3:P-TY
功能描述  SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  189 Pages
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制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc

IS25LE512M-RHLA3:P-TY 数据表(HTML) 176 Page - Integrated Silicon Solution, Inc

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IS25LE512M
IS25WE512M
Integrated Silicon Solution, Inc.- www.issi.com
176
Rev. A6
06/16/2025
9.3 DC CHARACTERISTICS
(Under operating range)
Symbol
Parameter
Condition
Min
Typ(2)
Max
Units
ICC1
VCC Active Read current
(3)
NORD
13
16
mA
FRD Single at 133MHz
16
20
FRD Dual at 133MHz
18
22
FRD Quad at 133MHz
22
27
FRD Single at 104MHz
15
19
FRD Dual at 104MHz
17
21
FRD Quad at 104MHz
20
24
FRD Single DTR at 66MHz
15
19
FRD Dual DTR at 66MHz
17
21
FRD Quad DTR at 66MHz
21
26
ICC2
VCC Program Current
CE# = VCC
85°C
30
35
mA
105°C
35
125°C
35
ICC3
VCC WRSR Current
CE# = VCC
85°C
60
80
105°C
80
125°C
80
ICC4
VCC Erase Current
(SER/4SER/BER32/4BER32/
BER64/4BER64)
CE# = VCC
85°C
30
35
105°C
35
125°C
35
ICC5
VCC Erase Current (CE)
CE# = VCC
85°C
60
80
105°C
80
125°C
80
ISB1
VCC Standby
Current CMOS
IS25LE
CE# = VCC,
VIN = GND or VCC
(4)
85°C
21
90 (6)
µA
105°C
140 (6)
125°C
260
IS25WE
85°C
21
90(6)
uA
105°C
140 (6)
125°C
260
ISB2
Deep power down
current
IS25LE
CE# = VCC,
VIN = GND or VCC
(4)
85°C
17
35 (6)
µA
105°C
50 (6)
125°C
90
IS25WE
85°C
1
35 (6)
105°C
50 (6)
125°C
90
ILI
Input Leakage Current
VIN = 0V to VCC
±25)
µA
ILO
Output Leakage Current
VIN = 0V to VCC
±2(5)
µA
VIL(1)
Input Low Voltage
-0.5
0.3VCC
V
VIH(1)
Input High Voltage
0.7VCC
VCC + 0.3
V
VOL
Output Low Voltage
IOL = 100 µA
0.2
V
VOH
Output High Voltage
IOH = -100 µA
VCC - 0.2
V



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