IS25LE512M-RHLA3:P-TY datasheet(175/189 Pages) ISSI

部件名	IS25LE512M-RHLA3:P-TY

功能描述	SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC

PDF	189 Pages

Scroll/Zoom	100%

制造商	ISSI [Integrated Silicon Solution, Inc]

网页	http://www.issi.com

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175 / 189 page

IS25LE512M

IS25WE512M

Integrated Silicon Solution, Inc.- www.issi.com

175

Rev. A6

06/16/2025

9. ELECTRICAL CHARACTERISTICS

9.1 ABSOLUTE MAXIMUM RATINGS (1)

Storage Temperature

-65°C to +150°C

Surface Mount Lead Soldering Temperature

Standard Package

240°C 3 Seconds

Lead-free Package

260°C 3 Seconds

Input Voltage with Respect to Ground on All Pins

-0.5V to VCC + 0.5V

All Output Voltage with Respect to Ground

-0.5V to VCC + 0.5V

VCC

IS25LE

-0.5V to +6.0V

IS25WE

-0.5V to +2.5V

Note:

Applied conditions greater than those listed in “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at these or any other conditions above

those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect reliability.

9.2 OPERATING RANGE

Operating Temperature

Extended Grade E

-40°C to 105°C

Automotive Grade A3

-40°C to 125°C

VCC Power Supply

IS25LE

2.3V (VMIN)

– 3.6V (VMAX); 3.0V (Typ)

IS25WE

1.70V (VMIN)

–1.95V (VMAX); 1.8V (Typ)

IS25LE512M-RHLA3:P-TY 数据表(PDF) 175 Page - Integrated Silicon Solution, Inc

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