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IS25LE512M-RHLA3:P-TY 数据表(PDF) 178 Page - Integrated Silicon Solution, Inc

部件名 IS25LE512M-RHLA3:P-TY
功能描述  SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  189 Pages
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制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc

IS25LE512M-RHLA3:P-TY 数据表(HTML) 178 Page - Integrated Silicon Solution, Inc

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IS25LE512M
IS25WE512M
Integrated Silicon Solution, Inc.- www.issi.com
178
Rev. A6
06/16/2025
9.6 AC CHARACTERISTICS
(-40°C to 125°C, 2.3V – 3.6V for 3.0V device & 1.70V– 1.95V for 1.8V device)
Symbol
Parameter
Min
Typ(2)
Max
Units
fCT
Clock Frequency except for
fast read DTR and read (03h)
IS25LE
0
133
MHz
IS25WE
0
112(5).
MHz
Clock Frequency for fast read DTR:
SPI DTR, Dual DTR, Dual I/O DTR, Quad I/O DTR, and
QPI DTR.
0
66
MHz
fC
Clock Frequency for read (03h)
0
50
MHz
tCLCH(1)
SCK Rise Time (peak to peak)
0.1
V/ns
tCHCL(1)
SCK Fall Time ( peak to peak)
0.1
V/ns
tCKH
SCK High Time
For read (03h)
0.45 x 1/fCmax
ns
For others
0.45 x 1/fCTmax
tCKL
SCK Low Time
For read (03h)
0.45 x 1/fCmax
ns
For others
0.45 x 1/fCTmax
tCEH
CE# High Time
7
ns
tCS
CE# Setup Time
5
ns
tCH
CE# Hold Time
3
ns
tCHSL
CE# Not Active Hold Time
3
ns
tSHCH
CE# Not Active Setup Time
3
ns
tDS
Data In Setup Time
STR
2
ns
DTR
1.5
tDH
Data in Hold Time
STR
2
DTR
1.5
tV
Output
Valid
IS25LE
2.7~3.6V,
-40°C to 85°C
@ CL = 10pF
6.0(4).
ns
@ CL = 30pF
7.5(4).
ns
2.3~3.6V,
-40°C to 125°C
@ CL = 10pF
7.0
ns
@ CL = 30pF
8.5.
ns
IS25WE
1.70~1.95V,
-40°C to 125°C
@ CL = 10pF
7.5
ns
@ CL = 30pF
9.0
ns
tOH
Output Hold Time
1
ns
tDIS(1)
Output Disable Time
8
ns
tWHSL(3)
Write Protect Setup Time
20
ns
tSHWL(3)
Write Protect Hold Time
100
ns
tHLCH
HOLD Active Setup Time relative to SCK
2
ns
tCHHH
HOLD Active Hold Time relative to SCK
2
ns
tHHCH
HOLD Not Active Setup Time relative to SCK
2
ns
tCHHL
HOLD Not Active Hold Time relative to SCK
2
ns
tLZ(1)
HOLD to Output Low Z
8
ns
tHZ(1)
HOLD to Output High Z
8
ns



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