Characteristics

STPS20SM80C

2/10

DocID018720 Rev 2

1

Characteristics

Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

80

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward

current δ = 0.5,

square wave

TO-220AB

TC = 155 °C

Per diode

10

A

TC = 150 °C

Per device

20

TO-220FPAB

TC = 130 °C

Per diode

10

TC = 100 °C

Per device

20

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

220

A

PARM(1)

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

385

W

VARM(2)

Maximum repetitive peak avalanche

voltage

tp

< 1 μs,

Tj < 150 °C,

IAR < 16.2 A

100

V

VASM(2)

Maximum single pulse peak

avalanche voltage

tp

< 1 μs,

Tj < 150 °C,

IAR < 16.2 A

100

V

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature (3)

175

°C

Notes:

(1)For pulse time duration deratings, please refer to figure 4. More details regarding the avalanche energy

measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

(2)See Figure 10

(3)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

TO-220AB

Per diode

2.30

°C/W

Total

1.55

TO-220FPAB

Per diode

5.80

Total

4.65

Rth(c)

Coupling

TO-220AB

0.80

°C/W

TO-220FPAB

3.50

When the diodes 1 and 2 are used simultaneously:

ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)