1

Characteristics

Table 1. Absolute Ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward current, δ = 0.5

TC = 155 °C

Per diode

15

A

TC = 150 °C

Per device

30

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

250

A

PARM

Repetitive peak avalanche power

tp = 10 µs , Tj = 125 °C

778

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(1)

+175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameter

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

1.6

°C/W

Total

0.9

Rth(c)

Coupling

0.10

°C/W

When the diodes 1 and 2 are used simultaneously :

ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

STPS30H100C

Characteristics

DS1560 - Rev 9

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