STPS30H60C datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

Characteristics

STPS30H60C

4/11

Doc ID 12123 Rev 3

Figure 7.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 8.

Relative variation of thermal

impedance junction to case versus

pulse duration

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

δ=0.1

δ=0.2

δ=0.5

Single pulse

δ=tp/T

t (s)

TO-220AB, TO-247 D PAK, I PAK

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

δ=0.1

δ=0.2

δ=0.5

Single pulse

δ=tp/T

TO-220FPAB

t (s)

Z/R

th(j-c)

Figure 9.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 10.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

I (mA)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

j=125°C

j=100°C

j=75°C

j=50°C

j=25°C

j=150°C

V (V)

C(nF)

0.1

1.0

10.0

100

F=1MHz

osc=30mVRMS

j=25°C

V (V)

Figure 11.

Forward voltage drop versus

forward current (per diode)

Figure 12.

Thermal resistance junction to

ambient versus copper surface

under tab

(A)

100

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

J=25 °C

Maximum values

J=125 °C

Maximum values

J=125 °C

Maximum values

J=125 °C

Typical values

J=125 °C

Typical values

(V)

S(cm²)

(°C/W)

th(j-a)

epoxy printed board FR4, copper thickness = 35 µm

D PAK

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