1

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, per diode)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

120

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward current, δ = 0.5 square wave

Per diode

15

A

Per device

30

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

220

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

828

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(1)

150

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AB, I²PAK

Per diode

1.3

°C/W

Total

0.7

TO-220FPAB

Per diode

4.5

Total

3.8

Rth(c)

Coupling

TO-220AB, I²PAK

0.1

TO-220FPAB

3

When the diodes 1 and 2 are used simultaneously:

Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)

For more information, please refer to the following application note:

•

AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

200

µA

Tj = 125 °C

-

12

35

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 5 A

-

0.675

V

Tj = 125 °C

-

0.51

0.57

Tj = 25 °C

IF = 15 A

-

0.88

Tj = 125 °C

-

0.65

0.71

Tj = 25 °C

IF = 30 A

-

1.08

Tj = 125 °C

-

0.755

0.84

1. Pulse test: tp = 5 ms, δ < 2%

STPS30L120C

Characteristics

DS6493 - Rev 4

page 2/14