1

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short

circuited)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(RMS)

Forward rms current

60

A

IF(AV)

Average forward current

30

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

300

A

PARM

Repetitive peak avalanche power

tp = 10 µs , Tj = 125 °C

1900

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(1)

150

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

TO-220AB

1

°C/W

TO-220FPAB

4

Table 3. Static electrical characteristics (anode terminals short circuited)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR (1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

175

µA

Tj = 125 °C

-

20

50

mA

Tj = 25 °C

VR = 70 V

-

60

µA

Tj = 125 °C

-

10

20

mA

VF (2)

Forward voltage drop

Tj = 25 °C

IF = 5 A

-

0.475

V

Tj = 125 °C

-

0.385

Tj = 25 °C

IF = 10 A

-

0.555

Tj = 125 °C

-

0.475

Tj = 25 °C

IF = 15 A

-

0.620

0.660

Tj = 125 °C

-

0.525

0.565

Tj = 25 °C

IF = 30 A

-

0.740

0.800

Tj = 125 °C

-

0.605

0.655

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.475 x IF(AV) + 0.006 x IF 2 (RMS)

For more information, please refer to the following application notes related to the power losses :

STPS30M100S

Characteristics

DS6171 - Rev 4

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