STPS30H60CFP datasheet(3/11 Pages) STMICROELECTRONICS

3 / 11 page

STPS30H60C

Characteristics

Doc ID 12123 Rev 3

3/11

Figure 1.

Conduction losses versus

average forward current

Figure 2.

Average forward current versus

ambient temperature

(

δ = 0.5, per diode)

(W)

F(AV)

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=tp/T

(A)

F(AV)

(A)

F(AV)

100

125

150

175

th(j-a)=Rth(j-c)

th(j-a)=15 °C/W

TO-220FPAB

(°C)

amb

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

P(tp)

(1µs)

ARM

t (µs)

0.2

0.4

0.6

0.8

1.2

100

125

150

P(T )

(25 °C)

ARM

T (°C)

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

I (A)

100

120

140

160

180

200

1.E-03

1.E-02

1.E-01

1.E+00

C=50°C

C=75°C

C=125°C

δ =0.5

t(s)

TO-220AB, TO-247 D PAK, I PAK

100

120

1.E-03

1.E-02

1.E-01

1.E+00

C=50 °C

C=75 °C

C=125 °C

δ =0.5

TO-220FPAB

I (A)

t(s)

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