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STPS30M100ST 数据表(PDF) 3 Page - STMicroelectronics

部件名 STPS30M100ST
功能描述  100 V power Schottky rectifier
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS30M100ST 数据表(HTML) 3 Page - STMicroelectronics

  STPS30M100ST Datasheet HTML 1Page - STMicroelectronics STPS30M100ST Datasheet HTML 2Page - STMicroelectronics STPS30M100ST Datasheet HTML 3Page - STMicroelectronics STPS30M100ST Datasheet HTML 4Page - STMicroelectronics STPS30M100ST Datasheet HTML 5Page - STMicroelectronics STPS30M100ST Datasheet HTML 6Page - STMicroelectronics STPS30M100ST Datasheet HTML 7Page - STMicroelectronics STPS30M100ST Datasheet HTML 8Page - STMicroelectronics STPS30M100ST Datasheet HTML 9Page - STMicroelectronics Next Button
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AN604: Calculation of conduction losses in a power rectifier
AN4021: Calculation of reverse losses on a power diode
1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current
0
2
4
6
8
10
12
14
16
18
20
22
24
26
0
4
8
12
16
20
24
28
32
36
=0.05
=0.1
= 0.2
=0.5
=1
T
=t /T
p
tp
PF(AV)(W)
δ
δ
δ
δ
δ
δ
IF(AV)(A)
Figure 2. Average forward current versus ambient
temperature (δ = 0.5, TO-220AB)
0
5
10
15
20
25
30
35
0
25
50
75
100
125
150
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
T
=tp/T
tp
T
(°C)
amb
IF(AV)(A)
δ
Figure 3. Normalized avalanche power derating versus
pulse duration (Tj = 125 °C)
P
(tp)
P
(10 µs)
ARM
ARM
0.001
0.01
0.1
1
1
10
100
1000
t (µs)
p
Figure 4. Relative variation of thermal impedance junction
to case versus pulse duration (TO-220AB)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Single pulse
Zth(j-c) /Rth(j-c)
tp(s)
TO-220AB
STPS30M100S
Characteristics (curves)
DS6171 - Rev 4
page 3/11



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