STPS30SM80C datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

STPS30SM80C

4/9

DocID018727 Rev 2

1.1

Characteristics (curves)

Figure 2: Average forward power dissipation

versus average forward current (per diode)

Figure 3: Average forward current versus ambient

temperature (δ = 0.5, per diode)

Figure 4: Normalized avalanche power derating

versus pulse duration (Tj = 125 °C)

Figure 5: Relative thermal impedance junction to

case versus pulse duration

Figure 6: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

Figure 7: Junction capacitance versus reverse

voltage applied (typical values, per diode)

0.0

2.5

5.0

7.5

10.0

12.5

15.0

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

δ = t / T

(A)

F(AV)

(W)

F(AV )

5 0

7 5

100

125

150

175

( A)

F(AV )

Rth(j-a) = Rth(j-c)

(°C)

am b

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

th(j-c)

t (s)

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

I (µA)

V (V)

T = 25 °C

T = 50 °C

T = 75 °C

T = 125 °C

T = 150 °C

T = 100 °C

100

1000

100

F = 1 MHz

= 30 mV

T = 25 °C

osc

RMS

C(pF)

V (V)

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