Characteristics

STPS30SM80C

2/9

DocID018727 Rev 2

1

Characteristics

Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

80

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward current

δ = 0.5, square wave

TC = 105 °C

Per diode

15

A

TC = 70 °C

Per device

30

IFSM

Surge non repetitive

forward current

tp = 10 ms sinusoidal

220

A

PARM(1)

Repetitive peak avalanche

power

tp = 10 µs, Tj = 125 °C

545

W

VARM(2)

Maximum repetitive peak

avalanche voltage

tp

< 1 μs, Tj < 150 °C, IAR < 22.8 A

100

V

VASM(2)

Maximum single pulse

peak avalanche voltage

tp

< 1 μs, Tj < 150 °C, IAR < 22.8 A

100

V

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature (3)

175

°C

Notes:

(1)For pulse time duration deratings, please refer to figure 4. More details regarding the avalanche energy

measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

(2)See Figure 9

(3)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

5.30

°C/W

Total

4.20

Rth(c)

Coupling

3.10

°C/W

When the diodes 1 and 2 are used simultaneously:

ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)