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STPS15LCD80C 数据表(PDF) 2 Page - STMicroelectronics |
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STPS15LCD80C 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 18 page ![]() 1 Characteristics Table 1. Absolute ratings (limiting values, per diode, at Tamb 25 °C, unless otherwise stated) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 80 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current δ = 0.5, square wave TO-220AB,D2PAK, I2PAK TC = 145 °C Per diode 7.5 A TC = 140 °C Per device 15 TO-220FPAB TC = 120 °C Per diode 7.5 TC = 85 °C Per device 15 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 120 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 190 W Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature (1) + 175 °C 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal parameter Symbol Parameter Value Unit Rth(j-c) Junction to case TO-220AB, D2PAK, I2PAK Per diode 3.50 °C/W TO-220FPAB 6.50 TO-220AB, D2PAK, I2PAK Total 2.15 TO-220FPAB 5.05 Rth(c) Coupling TO-220AB, D2PAK, I2PAK - 0.80 °C/W TO-220FPAB 3.60 When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) STPS15LCD80C Characteristics DS7077 - Rev 3 page 2/18 |
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