4

REF1925, REF1930, REF1933, REF1941

SBOS697A – SEPTEMBER 2014 – REVISED JANUARY 2017

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Product Folder Links: REF1925 REF1930 REF1933 REF1941

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Copyright © 2014–2017, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Input voltage

VIN

–0.3

6

V

EN

–0.3

VIN + 0.3

Temperature

Operating

–55

150

°C

Junction, TJ

150

Storage, Tstg

–65

170

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±4000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1500

(1)

See Figure 24 in the Typical Characteristics section for the minimum input voltage at different load currents and temperature.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VIN

Supply input voltage range (IL = 0 mA, TA = 25°C)

VREF + 0.02

(1)

5.5

V

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC(1)

REF19xx

UNIT

DDC (SOT23)

5 PINS

RθJA

Junction-to-ambient thermal resistance

193.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

40.2

°C/W

RθJB

Junction-to-board thermal resistance

34.5

°C/W

ψJT

Junction-to-top characterization parameter

0.9

°C/W

ψJB

Junction-to-board characterization parameter

34.3

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W