4

REF4132

SNAS794A – JUNE 2020 – REVISED JUNE 2020

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Copyright © 2020, Texas Instruments Incorporated

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied. These are stress ratings only and functional operation of the device at these or any other conditions

beyond those specified in the Electrical Characteristics Table is not implied.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Input voltage

VIN

–0.3

6

V

Enable voltage

VEN

–0.3

VIN + 0.3

V

Output voltage

VREF

–0.3

5.5

V

Output short circuit current

ISC

20

mA

Operating temperature range

TA

–55

150

°C

Storage temperature range

Tstg

–65

170

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001,

all pins(1)

±2500

V

Charged device model (CDM), per JEDEC specification

JESD22-C101, all pins(2)

±1500

(1)

Dropout voltage

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VIN

Input Voltage

VREF +

VDO

(1)

5.5

V

VEN

Enable Voltage

0

VIN

V

IL

Output Current

–10

10

mA

TA

Operating Temperature

–40

25

125

℃

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC(1)

DEVICE

UNIT

DBV

5 PINS

RθJA

Junction-to-ambient thermal resistance

185

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

156

°C/W

RθJB

Junction-to-board thermal resistance

29.6

°C/W

ΨJT

Junction-to-top characterization parameter

33.8

°C/W

ΨJB

Junction-to-board characterization parameter

29.1

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W