4

REF6025, REF6030, REF6033, REF6041, REF6045, REF6050

SBOS708B – MAY 2016 – REVISED AUGUST 2016

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Product Folder Links: REF6025 REF6030 REF6033 REF6041 REF6045 REF6050

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Copyright © 2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

(1)

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Input voltage

VIN

–0.3

6

V

VEN

–0.3

VIN + 0.3

V

Operating temperature, TA

–55

150

°C

Junction temperature, Tj

150

°C

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±1000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±250

7.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

VIN

Supply input voltage

(IOUT = 0 mA)

REF6025

3

5.5

V

REF6030, REF6033, REF6041, REF6045

VOUT + 0.25

5.5

REF6050

5.3

5.5

VEN

Enable voltage

0

VIN

V

IL

Output current

REF6025, REF6030, REF6033, REF6041

–4

4

mA

REF6045

–3.5

3.5

REF6050

–3

3

TA

Operating temperature

–40

25

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC(1)

REF60xx

UNIT

DGK (VSSOP)

8 PINS

RθJA

Junction-to-ambient thermal resistance

158.5

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

51.2

°C/W

RθJB

Junction-to-board thermal resistance

79.5

°C/W

ψJT

Junction-to-top characterization parameter

5.2

°C/W

ψJB

Junction-to-board characterization parameter

78.0

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W