1

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified, per diode)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

15

V

IF(RMS)

Forward rms current

160

A

IF(AV)

Average forward current , δ = 1 square wave

Tc = 115 °C

60

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

1200

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

5186

W

Tstg

Storage temperature range

-65 to +150

°C

Tj

Maximum operating junction temperature (1)

125

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

0.45

°C/W

Total

0.28

Rth(c)

Coupling

0.1

When the diodes 1 and 2 are used simultaneously :

Δ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

For more information, please refer to the following application note:

•

AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 100 °C

VR = 5 V

-

450

mA

Tj = 25 °C

VR = 12 V

-

22

Tj = 100 °C

-

0.7

2.2

A

VF(1)

Forward voltage drop

Tj = 25 °C

IF = 60 A

-

0.43

V

Tj = 125 °C

-

0.27

0.31

1. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.18 x IF(AV) + 0.0022 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPS120L15

Characteristics

DS1246 - Rev 7

page 2/9