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FERD15S50 数据表(PDF) 3 Page - STMicroelectronics |
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FERD15S50 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current (anode terminals short circuited) 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 20 PF(AV)(W) IF(AV)(A) tp T δ=tp/T Figure 2. Average forward current versus ambient temperature (δ = 0.5, anode terminals short circuited) 0 5 10 15 20 0 25 50 75 100 125 150 IF(AV)(A) R = R th(j th(j - - a) c) Tamb (°C) tp T δ=tp/T Figure 3. Relative variation of thermal impedance junction to case versus pulse duration 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Single pulse PowerFLAT™ 5x6 tP(s) Zth(j- c)/R th (j - c) Figure 4. Reverse leakage current versus reverse voltage applied (typical values) IR( A) m 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 0 5 10 15 20 25 30 35 40 45 50 Tj = 125 °C Tj = 25 °C VR(V) Figure 5. Junction capacitance versus reverse voltage applied (typical values) C(pF) 100 1000 10000 1 10 100 F = 1MHz Vosc = 30mVRMS Tj = 25 °C VR(V) Figure 6. Forward voltage drop versus forward current (typical values, anode terminals short circuited) 0.1 1.0 10 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IF (A ) Tj = 25°C Tj = 125°C VF(V) FERD15S50 Characteristics (curves) DS9849 - Rev 3 page 3/9 |
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