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FERD15S50 数据表(PDF) 3 Page - STMicroelectronics

部件名 FERD15S50
功能描述  50 V, 15 A field effect rectifier
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

FERD15S50 数据表(HTML) 3 Page - STMicroelectronics

  FERD15S50 Datasheet HTML 1Page - STMicroelectronics FERD15S50 Datasheet HTML 2Page - STMicroelectronics FERD15S50 Datasheet HTML 3Page - STMicroelectronics FERD15S50 Datasheet HTML 4Page - STMicroelectronics FERD15S50 Datasheet HTML 5Page - STMicroelectronics FERD15S50 Datasheet HTML 6Page - STMicroelectronics FERD15S50 Datasheet HTML 7Page - STMicroelectronics FERD15S50 Datasheet HTML 8Page - STMicroelectronics FERD15S50 Datasheet HTML 9Page - STMicroelectronics  
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1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current (anode terminals short circuited)
0
2
4
6
8
10
12
0
2
4
6
8
10
12
14
16
18
20
PF(AV)(W)
IF(AV)(A)
tp
T
δ=tp/T
Figure 2. Average forward current versus ambient
temperature (δ = 0.5, anode terminals short circuited)
0
5
10
15
20
0
25
50
75
100
125
150
IF(AV)(A)
R
= R
th(j
th(j
-
-
a)
c)
Tamb (°C)
tp
T
δ=tp/T
Figure 3. Relative variation of thermal impedance junction
to case versus pulse duration
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Single pulse
PowerFLAT™ 5x6
tP(s)
Zth(j- c)/R th (j - c)
Figure 4. Reverse leakage current versus reverse voltage
applied (typical values)
IR( A)
m
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0
5
10
15
20
25
30
35
40
45
50
Tj = 125 °C
Tj = 25 °C
VR(V)
Figure 5. Junction capacitance versus reverse voltage
applied (typical values)
C(pF)
100
1000
10000
1
10
100
F = 1MHz
Vosc = 30mVRMS
Tj = 25 °C
VR(V)
Figure 6. Forward voltage drop versus forward current
(typical values, anode terminals short circuited)
0.1
1.0
10
100
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
IF (A )
Tj = 25°C
Tj = 125°C
VF(V)
FERD15S50
Characteristics (curves)
DS9849 - Rev 3
page 3/9



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