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ICS345RIPT 数据表(PDF) 6 Page - Integrated Device Technology |
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ICS345RIPT 数据表(HTML) 6 Page - Integrated Device Technology |
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6 / 9 page ![]() ICS345 TRIPLE PLL FIELD PROGRAMMABLE SS VERSACLOCK SYNTHESIZER EPROM CLOCK SYNTHESIZER IDT™ / ICS™ TRIPLE PLL FIELD PROGRAMMABLE SS VERSACLOCK SYNTHESIZER 6 ICS345 REV K 110207 AC Electrical Characteristics Unless stated otherwise, VDD = 3.3 V ±5%, Ambient Temperature -40 to +85 ° C Note 1: Measured with 15 pF load. Note 2: Duty Cycle is configuration dependent. Most configurations are min 45% / max 55% Note 3: IDT test mode output occurs for first 170 clock cycles on CLK7 for each PLL powered up. PDTS transition high on select address change. Note 4: The actual ppm error will be displayed in the VersaClock software when the programming file is generated for the customer’s specific configuration. In general, zero ppm error can be achieved, but please note that the device cannot improve upon the error of the input reference clock. For example, if the input crystal has 25 ppm error, then the outputs will also have 25 ppm error. Thermal Characteristics Parameter Symbol Conditions Min. Typ. Max. Units Input Frequency FIN Fundamental crystal 5 27 MHz Input clock 2 50 MHz Output Frequency VDD=3.3 V 0.25 200 MHz Output Rise Time tOR 20% to 80%, Note 1 1 ns Output Fall Time tOF 80% to 20%, Note 1 1 ns Duty Cycle Note 2 40 49-51 60 % Output Frequency Synthesis Error (Note 4) Configuration Dependent 0 ppm Power-up Time PLL lock-time from power-up, Note 3 410 ms PDTS goes high until stable CLK output, Spread Spectrum Off, Note 3 0.2 2 ms PDTS goes high until stable CLK output, Spread Spectrum On, Note 3 47 ms One Sigma Clock Period Jitter Configuration Dependent 50 ps Maximum Absolute Jitter tja Deviation from Mean. Configuration Dependent +200 ps Pin-to-Pin Skew Low Skew Outputs -250 250 ps Parameter Symbol Conditions Min. Typ. Max. Units Thermal Resistance Junction to Ambient θJA Still air 135 ° C/W θJA 1 m/s air flow 93 ° C/W θJA 3 m/s air flow 78 ° C/W Thermal Resistance Junction to Case θJC 60 ° C/W |
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