STPS2045CT datasheet(4/15 Pages) STMICROELECTRONICS

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Characteristics

STPS2045C

4/15

DocID3506 Rev 10

1.1

Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current (per diode)

Figure 2: Average forward current versus ambient

temperature (δ = 0.5, per diode)

Figure 3: Normalized avalanche power deratings

versus pulse duration (Tj = 125 °C)

Figure 4: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

Figure 5: Relative variation of thermal impedance

junction to case versus pulse duration

(TO-220AB, D²PAK)

Figure 6: Relative variation of thermal impedance

junction to case versus pulse duration

(TO-220FPAB)

= tp/T

= 1

= 0.5

= 0.2

= 0.1

= 0.05

PF(AV)(W)

IF(AV)(A)

2 5

5 0

7 5

100

125

150

175

D²PAK

(°C)

am b

= tp/T

IF(AV)(A)

th(j-a)

= R

th(j-c)

th(j-a)

= 15 °C/W

TO-220AB

TO-220FPAB

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

5E+4

T = 150°C

T = 125°C

T = 100°C

T = 75°C

T = 50°C

T = 25°C

IR(µA)

VR(V)

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

t (s)

th(j-c) th(j-c)

δ= tp/T

1E-3

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

= 0.1

= 0.2

= 0.5

t (s )

δ = tp/T

th(j-c) th(j-c)

Single pulse

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