STPS1545C

Characteristics

DocID3503 Rev 8

3/13

1.1

Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current (per diode)

Figure 2: Average forward current versus ambient

temperature (δ = 0.5, per diode)

Figure 3: Normalized avalanche power derating

versus pulse duration (Tj = 125 °C)

Figure 4: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

Figure 6: Junction capacitance versus reverse

voltage applied (typical values, per diode)

P

(W)

F(AV)

0

1

2

3

4

5

6

T

δ=tp/T

tp

I

(A)

F(AV)

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

0

1

2

3

4

5

6

7

8

9

10

0

25

50

75

100

125

150

175

0

1

2

3

4

5

6

7

8

9

I

(A)

F(AV)

R

=R

th(j-a )

th(j-c)

R

=15°C/W

th(j-a)

R

=40°C/W

th(j-a)

T

(°C)

amb

T

δ=tp/T

tp

P

(tp)

P

(10 µs)

ARM

ARM

0.001

0.01

0.1

1

1

10

100

1000

t (µs)

p

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

Z

/R

th(j-c )

th(j-c)

T

δ=tp/T

tp

t (s)

p

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

0

5

10

15

20

25

30

35

40

45

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

5E+4

I (µA)

R

V (V)

R

T =125°C

j

T =150°C

j

T =100°C

j

T =25°C

j

T =50°C

j

T =75°C

j

1

2

5

10

20

50

100

200

500

1000

C(pF)

V (V)

R

F=1MHz

V

=30mV

T =25°C

OS C

RMS

j