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SN74LVC1G98DBVT.B 数据表(PDF) 2 Page - Texas Instruments |
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SN74LVC1G98DBVT.B 数据表(HTML) 2 Page - Texas Instruments |
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2 / 32 page ![]() 3 1 6 In2 In1 In0 4 Y SN74LVC1G98 SCES417L – DECEMBER 2002 – REVISED DECEMBER 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Function Table INPUTS OUTPUT Y In2 In1 In0 L L L H L L H H L H L L L H H L H L L H H L H L H H L H H H H L Logic Diagram (Positive Logic) Function Selection Table LOGIC FUNCTION FIGURE NO. 2-to-1 data selector with inverted output Figure 1 2-input NAND gate Figure 2 2-input NOR gate with one inverted input Figure 3 2-input AND gate with one inverted input Figure 3 2-input NAND gate with one inverted input Figure 4 2-input OR gate with one inverted input Figure 4 2-input NOR gate Figure 5 Noninverted buffer Figure 6 Inverter Figure 7 2 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: SN74LVC1G98 |
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