Characteristics

STPS60170C

2/8

DocID11642 Rev 3

1

Characteristics

Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

170

V

IF(RMS)

Forward rms current

45

A

IF(AV)

Average forward current δ = 0.5,

square wave

TC = 150 °C

Per diode

30

A

Per device

60

IFSM

Surge non repetitive forward current

tp = 10 ms

sinusoidal

270

A

PARM

Repetitive peak avalanche power

tp = 10 µs,

Tj = 125 °C

985

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature (1)

175

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

1.0

°C/W

Total

0.7

Rth(c)

Coupling

0.4

When the diodes 1 and 2 are used simultaneously:

ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

Table 4: Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

35

µA

Tj = 125 °C

-

8

35

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 30 A

-

0.94

V

Tj = 125 °C

-

0.72

0.76

Tj = 25 °C

IF = 60 A

-

0.97

1.05

Tj = 125 °C

-

0.86

0.92

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.60 x IF(AV) + 0.0053 x IF2(RMS)