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HGTP12N60C3 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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HGTP12N60C3 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISG2249 eq HGTP12N60C3 IGBT www.iscsemi.com 2 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.2 ℃ /W STATIC CHARACTERISTICS(TJ = 25 °C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT VCES Collector-Emitter Breakdown Voltage VGE= 0V, IC= 0.25mA 600 -- -- V VGE(th) Gate-Emitter Threshold Voltage VCE= VGE, IC= 0.25mA 3.0 -- 6.0 V VCE(sat) Collector-Emitter Saturation Voltage IC= 12A, VCE= 15V, TJ= 25℃ -- -- 2.0 V IC= 12A, VCE= 15V, TJ= 150℃ -- -- 2.2 V ICES Zero Gate Voltage Collector Current VCE= 600V, VGE= 0V, TJ= 25℃ -- -- 250 uA IGES Gate-Emitter Leakage Current VGE=±20V, VCE= 0V -- -- ± 100 nA PACKAGE OUTLINE (UNIT: mm) |
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