1

Characteristics

Table 1. Absolute ratings (limiting values, per diode at Tamb = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

45

V

IF(RMS)

Forward rms current

170

A

IF(AV)

Average forward current, δ = 0.5, square wave

TC = 80 °C

Per diode

120

A

TC = 70 °C

Per device

240

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

1500

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

3096

W

Tstg

Storage temperature range

-55 to +150

°C

Tj

Maximum operating junction temperature (1)

150

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

0.65

°C/W

Total

0.38

Rth(c)

Coupling

0.10

When the diodes 1 and 2 are used simultaneously:

Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

For more information, please refer to the following application note:

•

AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR (1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

2

mA

Tj = 125 °C

-

300

VF (2)

Forward voltage drop

Tj = 25 °C

IF = 240 A

-

0.91

V

Tj = 125 °C

-

0.72

0.87

Tj = 125 °C

IF = 120 A

-

0.52

0.67

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses, use the following equation:

P = 0.47 x IF(AV) + 0.00167 x IF 2 (RMS)

For more information, please refer to the following application notes related to the power losses:

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPS24045

Characteristics

DS0753 - Rev 4

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