1

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, per diode, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

120

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward current , δ = 0.5

Tc = 145 °C

Per diode

15

A

Tc = 140 °C

Per device

30

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

180

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

480

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(1)

175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

2.2

°C/W

Total

1.3

Rth(c)

Coupling

0.3

When the diodes 1 and 2 are used simultaneously:

Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

15

µA

Tj = 125 °C

-

2.5

7.5

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 5 A

-

0.74

V

Tj = 125 °C

-

0.57

0.61

Tj = 25 °C

IF = 15 A

-

0.92

Tj = 125 °C

-

0.70

0.74

Tj = 25 °C

IF = 30 A

-

1.02

Tj = 125 °C

-

0.83

0.89

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.59 x IF(AV) + 0.01 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses :

STPS30120C

Characteristics

DS4230 - Rev 5

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