STPS30170C datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Characteristics

STPS30170C

4/13

DocID11640 Rev 2

1.1

Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current (per diode)

Figure 2: Average forward current versus ambient

temperature (δ = 0.5, per diode)

Figure 3: Normalized avalanche power derating

versus pulse duration (Tj = 125 °C)

Figure 4: Relative variation of thermal impedance

junction to case versus pulse duration (D²PAK and

TO-247)

Figure 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

Figure 6: Junction capacitance versus reverse

voltage applied (typical values, per diode)

34567

F (AV ) (W )

=0.05

=0.1

=0.2

=0.5

=t /T

IF(AV) (A)

100

125

150

175

IF(AV)(A)

Rth(j-a)=15 °C/W

=t /T

Tamb(°C)

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-0

Zth(j-c)/Rth(j-c)

=0.1

=0.2

=0.5

Single pulse

=t /T

tP(s)

1.E+00

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

1.E+06

20 30

40 50

60 70

80 90 10 0 11 0 12 0 13 0 14 0 15 0 16 0 170

IR(µA)

Tj=150°C

Tj=125°C

Tj=25°C

Tj=75°C

Tj=175°C

VR(V)

100

1000

C(pF)

F=1MHz

OSC = 30m V

RMS

j= 25°C

R (V)

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