Figure 5. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0

10

20

30

40

50

60

70

80

90

100

110

120

I (mA)

R

V (V)

R

T =125°C

j

T =25°C

j

T =50°C

j

T =75°C

j

T =100°C

j

T =150°C

j

Figure 6. Junction capacitance versus reverse voltage

applied (typical values, per diode)

10

100

1000

1

10

100

C (pF)

VR(V)

F= 1MHz

V

=30mV

T = 25°C

OSC

RMS

j

Figure 7. Forward voltage drop versus forward current (per diode)

1

10

100

0.0

0 .2

0.4

0 .6

0.8

1 .0

1.2

1.4

I (A)

F

V (V)

F

T= 25°C

(maximum values)

j

T= 125°C

(maximum values)

j

T= 125°C

(typical values)

j

STPS40120C

Characteristics (curves)

DS4231 - Rev 4

page 4/11