1

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(AV)

Average forward current, δ = 0.5, square

wave

SOD123Flat

TL = 140 °C

2

A

SOD128Flat

TL = 140 °C

SMB Flat

TL = 150 °C

IFSM

Surge non repetitive forward current

SOD123Flat

tp = 10 ms

sinusoidal

35

A

SOD128Flat

SMB Flat

IAS

Single pulse avalanche current(1)

Tj = 25°C, L = 300 µH, VDD = 15 V

3

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(2)

+175

°C

1. Please refer to Figure 1 and Figure 2 for the unclamped inductive switching test circuit, and waveform.

2. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameter

Symbol

Parameter

Typ.

value

Unit

Rth(j-l)

Junction to lead

SOD123Flat

15

°C/W

SOD128Flat

14

SMB Flat

11

For more information, please refer to the following application note:

•

AN5088: Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 125 °C

VR = 70 V

-

0.25

0.75

mA

Tj = 25 °C

VR = 100 V

-

2.7

µA

Tj = 125 °C

-

0.45

1.5

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 1 A

-

0.590 0.655

V

Tj = 125 °C

-

0.520 0.575

Tj = 25 °C

IF = 2 A

-

0.725 0.805

Tj = 125 °C

-

0.620 0.670

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.480 x IF(AV) + 0.095 x IF2(RMS)

STPST2H100

Characteristics

DS14190 - Rev 3

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