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STPST3H100AF 数据表(PDF) 2 Page - STMicroelectronics |
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STPST3H100AF 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 12 page ![]() 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(AV) Average forward current, δ = 0.5 square wave SOD128Flat Tl = 130 °C 3 A SMB Flat Tl = 140 °C IFSM Surge non repetitive forward current SOD128Flat tp = 10 ms sinusoidal 50 A SMB Flat 55 IAS Single pulse avalanche current(1) Tj = 25°C, L = 300 µH, VDD = 15 V 5 A Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature(2) +175 °C 1. Please refer to Figure 1 and Figure 2 for the unclamped inductive switching test circuit, and waveform. 2. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameter Symbol Parameter Typ. value Unit Rth(j-l) Junction to lead SOD128Flat 13 °C/W SMB Flat 10 For more information, please refer to the following application note: • AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR(1) Reverse leakage current Tj = 125 °C VR = 70 V - 0.45 1.4 mA Tj = 25 °C VR = 100 V - 5.7 µA Tj = 125 °C - 0.8 3.0 mA VF(2) Forward voltage drop Tj = 25 °C IF = 1.5 A - 0.565 0.625 V Tj = 125 °C - 0.500 0.555 Tj = 25 °C IF = 3 A - 0.685 0.755 Tj = 125 °C - 0.600 0.650 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.46 x IF(AV) + 0.0633 x IF2(RMS) For more information, please refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode STPST3H100 Characteristics DS13610 - Rev 4 page 2/12 |
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