7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

VS

Supply voltage

33

V

VI

Input voltage

±VS

V

VID

Differential input voltage

±4

V

IO

Output current

350

mA

TJ (2)

Junction temperature

Maximum

150

°C

Continuous operation, long-term

reliability

125

Tstg

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress

ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2)

The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature can

result in reduced reliability, reduced lifetime of the device, or both.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002(2)

±1500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VS

Supply voltage

Dual supply

±5

±15

±16

V

Single supply

10

30

32

TA

Operating free-air temperature

–40

85

°C

7.4 Thermal Information

THERMAL METRIC(1)

THS309x

THS3091

UNIT

DDA (SO PowerPAD)

DGN (HVSSOP)

8 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

58.4

60.4

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

72.0

87.2

°C/W

RθJB

Junction-to-board thermal resistance

32.6

32.6

°C/W

ψJT

Junction-to-top characterization parameter

13.2

7.8

°C/W

ψJB

Junction-to-board characterization parameter

32.5

32.6

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

17.1

17.0

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

www.ti.com

THS3091, THS3095

SLOS423K – SEPTEMBER 2003 – REVISED APRIL 2023

Copyright © 2023 Texas Instruments Incorporated

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