1.1

Characteristics (curves)

Figure 3. Average forward current versus case

temperature (δ = 0.5)

0

5

10

15

20

25

30

35

0

25

50

75

100

125

150

175

IF(AV)(A)

Tc(°C)

Figure 4. Relative variation of thermal impedance junction

to case versus pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

Zth(j-c)/Rth(j-c)

tP(s)

Single pulse

Figure 5. Reverse leakage current versus reverse voltage

applied (typical values)

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

0

10

20

30

40

50

60

70

80

90

100

IR(µA)

VR(V)

Tj = 25 °C

Tj = 100 °C

Tj = 75 °C

Tj = 50 °C

Tj = 125 °C

Tj = 150 °C

Figure 6. Junction capacitance versus reverse voltage

applied (typical values)

100

1000

10000

0.1

1.0

10.0

100.0

C(pF)

VR(V)

F = 1 MHz

VOSC = 30 mVRMS

Tj = 25 °C

Figure 7. Forward voltage drop versus forward current

(typical values)

0.1

1.0

10.0

100.0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

IF(A)

VF(V)

Tj = 125 °C

Tj = 75 °C

Tj = 150 °C

Tj = 25 °C

Figure 8. Thermal resistance junction to ambient versus

copper surface under tab (typical values, epoxy printed

board FR4, eCu= 70 µm)

0

10

20

30

40

50

60

70

80

90

100

0

5

10

15

20

25

30

35

40

Rth(j-a)(°C/W)

SCu(cm²)

DPAK

STPST15H100SB

Characteristics (curves)

DS14180 - Rev 2

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