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Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage (Tj = -40°C to + 175°C)

100

V

IF(RMS)

Forward RMS current

93

A

IF(AV)

Average forward current

Tc = 155 °C, δ = 0.8 square wave

80

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

900

A

IAS

Single pulse avalanche current (1)

Tj = 25°C, L = 300 µH, VDD = 15 V

16

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Operating junction temperature range(2)

-40 to +175

°C

1. Please refer to Figure 1 and Figure 2 for the unclamped inductive switching test circuit, and waveform.

2. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameter

Symbol

Parameter

Typ.

value

Unit

Rth(j-c)

Junction to case

0.20

°C/W

For more information you can refer to:

•

TN1378: HU3PAK package mounting and thermal behavior.

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

100

µA

Tj = 125 °C

-

25

65

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 40 A

-

0.650

V

Tj = 125 °C

-

0.535 0.590

Tj = 25 °C

IF = 80 A

-

0.810

Tj = 125 °C

-

0.660 0.710

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.47 x IF(AV) + 0.003 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPST80H100-Y

Characteristics

DS14555 - Rev 2

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