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STTH1R04AY 数据表(PDF) 3 Page - STMicroelectronics |
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STTH1R04AY 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STTH1R04-Y Characteristics DocID024449 Rev 2 3/12 Table 5: Dynamic electrical characteristics per diode (Tj = 25 °C, unless otherwise specified) Symbol Parameters Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 1 A dIF/dt = - 50 A/μs VR = 30 V - 30 ns IF = 1 A dIF/dt = - 100 A/μs VR = 30 V - 14 20 IRM Reverse recovery current IF = 1 A dIF/dt = - 200 A/μs VR = 320 V Tj = 125 °C - 2.5 3.5 A VFP Forward recovery voltage IF = 1 A dIF /dt = 100 A/μs - 2.9 V tfr Forward recovery time IF = 1 A dIF /dt = 100 A/μs VFR = 1.1 x VF (max) - 50 ns |
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