Figure 7. Reverse recovery charges versus dIF/dt

(typical values)

rr

Q

n

(

)

C

0

25

50

75

100

125

150

175

200

225

250

0

50

100

150

200

250

300

350

400

450

500

dIF/dt A/µ

(

s)

I = 0.5 x I

F

F(av)

I = I

F

F(av)

I = 2 x I

F

F(av)

VR = 400 V

= 125 °C

Tj

Figure 8. Reverse recovery softness factor versus dIF/dt

(typical values)

0

1

2

3

4

5

6

0

50

100

150

200

250

300

350

400

450

500

I = I

F

F(av)

V

= 400

VR

Tj = 125 °C

Sfactor

dIF/dt A/µ

(

s)

Figure 9. Relative variation of dynamic parameters versus

junction temperature

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

25

50

75

100

125

Sfactor

IRM

QRR

V

I = I

F

F(av)

VR = 400

Reference: T j = 125 °C

j

T °C

(

)

Figure 10. Transient peak forward voltage versus dIF/dt

(typical values)

0

2

4

6

8

10

12

14

16

20

40

60

80

100

120

140

160

180

200

dIF/dt A/µ

(

s)

F

I = 2 A

Tj = 125 °C

FP

V

V

( )

Figure 11. Forward recovery time versus dIF/dt

(typical values)

FR(

t

ns)

0

20

40

60

80

100

20

40

60

80

100

120

140

160

180

200

F

I = 2 A

VFR = 3.5 V

Tj = 125 °C

dIF/dt A/µ

(

s)

Figure 12. Junction capacitance versus reverse voltage

applied (typical values)

(

C pF)

1

10

100

1

10

100

1000

VR(V)

F = 1 MHz

Vosc = 30 mVRMS

Tj = 25 °C

STTH1R06-Y

Electrical characteristics (curves)

DS10488 - Rev 2

page 4/10