Figure 7. Reverse recovery charges versus dIF/dt (typical

values)

rr

Q

n

(

)

C

0

100

200

300

400

500

600

700

800

0

100

200

300

400

500

dIF/dt A/µ

(

s)

VR = 400 V

Tj = 125 °C

I = 2 x I

F

F(av)

I = I

F

F(av)

I = 0.5 x I

F

F(av)

Figure 8. Relative variation of dynamic parameters versus

junction temperature

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

25

50

75

100

125

I = I

F

F(av)

VR = 400 V

Reference: T j = 125 °C

j

T °C

(

)

QRR

tRR

IRM

Figure 9. Transient peak forward voltage versus dIF/dt

(typical values)

FP

V

V

( )

0

2

4

6

8

10

12

20

40

60

80

100

120

140

160

180

200

F

I = 2 A

Tj = 125 °C

dIF/dt A/µ

(

s)

Figure 10. Forward recovery time versus dIF/dt (typical

values)

FR(

t

ns)

0

20

40

60

80

100

20

40

60

80

100

120

140

160

180

200

dIF/dt A/µ

(

s)

F

I = 2 A

V

VFR = 2.5

Tj = 125 °C

Figure 11. Junction capacitance versus reverse voltage

applied (typical values)

C(pF)

1

10

100

1

100

10

1000

F = 1 MHz

Vosc = 30 mVRMS

= 25 °C

Tj

VR(V)

Figure 12. Thermal resistance junction to ambient versus

copper surface under each lead

0

30

60

90

120

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

Rth(j-a)(°C/W)

SMB-Flat

SCu(cm²)

Epoxy printed board FR4, copper thickness: 70 μm

STTH2L06-Y

Electrical characteristics (curves)

DS10490 - Rev 2

page 4/9