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HCF4006B 数据表(PDF) 5 Page - STMicroelectronics |
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HCF4006B 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 11 page ![]() DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25°C, CL = 50pF, RL = 200kΩ, typical temperature coefficient for all VDD values is 0.3%/°C, all input rise and fall times = 20ns) Val ue Symbol Parameter Test Conditions V DD (V) Min. Typ. Max. Unit t PLH,tPHL Propagation Delay Time 5 200 ns 10 100 15 80 t THL,tTLH Transition Time 5 100 ns 10 50 15 40 t w Clock Pulse Width 5 100 ns 10 45 15 30 t r,tf Clock Input Rise or Fall Time* 5 15 µs 10 15 15 15 t se tup Data Setup Time 5 50 ns 10 25 15 20 f max Maximum Clock Input Frequency 5 5 MHz 10 12 15 16 * If more than unit is cascaded trCL should be made less than or equal to the sum of the transition time and the fixed propagation delay of the output of the driving stage for the estimated capacitive load. Minimum Output Low (sink) Current Charac- teristics. Typical Output Low (sink) Current Characteristics. HCC/HCF4006B 5/11 |
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