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STPST10H100 数据表(PDF) 2 Page - STMicroelectronics

部件名 STPST10H100
功能描述  100 V - 10 A power Schottky trench diode
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPST10H100 数据表(HTML) 2 Page - STMicroelectronics

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1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, with 2 anode terminals
short-circuited)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(AV)
Average forward current, δ = 0.5 square wave
Tc = 155 °C(1)
10
A
IFSM
Surge non repetitive forward current
tp = 10 ms
sinusoidal
235
A
IAS
Single pulse avalanche current (2)
Tj = 25°C, L
= 300 µH,
VDD = 15 V
14
A
Tstg
Storage temperature range
-65 to +175
°C
Tj
Maximum operating junction temperature(3)
+175
°C
1. Value based on Rth(j-c)(max.).
2. Please refer to Figure 1 and Figure 2 for the unclamped inductive switching test circuit, and waveform.
3. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameter
Symbol
Parameter
Typ.
value
Unit
Rth(j-c)
Junction to case
PSMC (TO-277)
1.25
°C/W
For more information, please refer to the following application note:
AN5088: Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR(1)
Reverse leakage current
Tj = 125 °C
VR = 70 V
-
2
6.4
mA
Tj = 25 °C
VR = 100 V
-
26
µA
Tj = 125 °C
-
4
13.5
mA
VF(2)
Forward voltage drop
Tj = 25 °C
IF = 5 A
-
0.535 0.590
V
Tj = 125 °C
-
0.460 0.520
Tj = 25 °C
IF = 10 A
-
0.635 0.700
Tj = 125 °C
-
0.565 0.620
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.42 x IF(AV) + 0.020 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses :
AN604: Calculation of conduction losses in a power rectifier
AN4021: Calculation of reverse losses on a power diode
STPST10H100
Characteristics
DS13612 - Rev 3
page 2/9



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