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STPST5H100AFY 数据表(PDF) 4 Page - STMicroelectronics |
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STPST5H100AFY 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 12 page ![]() 1.1 Characteristics (curves) Figure 3. Average forward current versus lead temperature (δ = 0.5, SOD128Flat) IF(AV)(A) 0 2 4 6 8 10 12 0 25 50 75 100 125 150 175 Tl(°C) SOD128-Flat Figure 4. Average forward current versus case temperature (δ = 0.5, PSMC) 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 IF(AV)(A) Tc(°C) Figure 5. Relative variation of thermal impedance junction to lead versus pulse duration (SOD128Flat) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Zth(j-l)/Rth(j-l) tP(s) Single pulse Figure 6. Relative variation of thermal impedance junction to case versus pulse duration (PSMC) Zth(j-c) /Rth(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Single pulse tP(s) Figure 7. Reverse leakage current versus reverse voltage applied (typical values) 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 0 10 20 30 40 50 60 70 80 90 100 IR(µA) VR(V) Tj = 25 °C Tj = 100 °C Tj = 75 °C Tj = 50 °C Tj = 125 °C Tj = 150 °C Figure 8. Junction capacitance versus reverse voltage applied (typical values) 10 100 1000 0.1 1.0 10.0 100.0 C(pF) VR(V) F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C STPST5H100-Y Characteristics (curves) DS14183 - Rev 3 page 4/12 |
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