Characteristics

STTH602C-Y

2/9

DocID023250 Rev 2

1

Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

200

V

IF(RMS)

Forward rms current

11

A

IF(AV)

Average forward current

δ = 0.5, square wave

Tc = 160 °C

3

A

Tc = 155 °C

6

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

60

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Operating junction temperature range

-40 to +175

°C

Table 3: Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

5

°C/W

Per device

3

Rth(c)

Coupling

1

When the two diodes 1 and 2 are used simultaneously:

ΔTj(diode 1) = P (diode 1) x Rth(j-c) (Per diode) + P (diode 2) x Rth(c)

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

3

µA

Tj = 125 °C

-

3

30

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 3 A

-

0.98

1.1

V

Tj = 150 °C

-

0.8

0.95

Tj = 25 °C

IF = 6 A

-

1.1

1.25

Tj = 150 °C

-

0.9

1.05

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.85 x IF(AV) + 0.033 x IF2(RMS)