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STTH5R06-Y 数据表(PDF) 2 Page - STMicroelectronics |
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STTH5R06-Y 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 13 page ![]() 1 Characteristics Table 1. Absolute ratings (limiting values, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage Tj from -40 °C to 175 °C 600 V IF(RMS) Forward rms current D2PAK 25 A DPAK 10 IF(AV) Average forward current, δ = 0.5, square wave D2PAK, DPAK TC = 145 °C 5 A IFSM Surge non repetitive forward current D2PAK tp = 10 ms sinusoidal 70 A DPAK 50 Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature range -40 to +175 °C For more information, please refer to the following application note : • AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 2. Thermal parameters Symbol Parameter Maximum value Unit Rth(j-c) Junction to case Per diode 2.2 °C/W Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM - 30 µA Tj = 125 °C - 30 300 VF (2) Forward voltage drop Tj = 25 °C IF = 5 A - 3.20 V Tj = 125 °C - 1.50 1.95 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp =380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 1.35 x IF(AV) + 0.12 x IF 2 (RMS) STTH5R06-Y Characteristics DS6874 - Rev 2 page 2/13 |
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