HCF4013B datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25°C, CL = 50pF, RL = 200kΩ,

typical temperature coefficient for all VDD = 0.3%/°C values, all input rise and fall time = 20ns)

Val ue

Symbol

Parameter

Test Conditions

V DD (V) Min.

Typ.

Max.

Unit

t PLH,tPHL Propagation Delay Time

(clock to Q or Q outputs)

5150

300

130

t PL H

Propagation Delay Time

(set to Q or reset to Q)

5150

300

130

t PHL

Propagation Delay Time

(set to Q or reset to Q)

5200

400

170

120

t THL,tTLH Transition Time

100

200

100

f CL *

Maximum Clock Input Frequency

3.5

MHz

t W

Cock Pulse Width

140

t r,tf**

Clock Input Rise or Fall Time

µs

t W

Set or Reset Pulse Width

180

t se tu p

Data Setup Time

* Input t

r,tf = 5ns.

** If more than unit is cascaded in a parallel clocked application, tr should be made less than or equal to the sum of the fixed

propagation delay time at 15pF and the transition time of the carry output driving stage for the estimated capacitive load.

HCC/HFC4013B

4/11

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