6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

IO voltage (D+ and D- pins)

TPD2EUSB30, TPD4EUSB30

0

6

V

TPD2EUSB30A

0

4

IEC 61000-4-5 surge current (tp = 8/20 μs)

D+, D– pins

5

A

IEC 61000-4-5 surge peak power (tp = 8/20 μs)

D+, D– pins

45

W

TA

Operating free-air temperature

–40

85

°C

Tstg

Storage temperature

–65

125

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the

specifications is not implied. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic

discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)

2500

V

Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2)

1500

IEC 61000-4-2 Contact Discharge

D+, D– pins

8000

IEC 61000-4-2 Air-Gap Discharge (TPD2EUSB30/A)

D+, D– pins

8000

IEC 61000-4-2 Air-Gap Discharge (TPD4EUSB30)

D+, D– pins

9000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

TA operating free-air temperature

–40

85

°C

Operating Voltage

TPD2EUSB30, TPD4EUSB30

0

5.5

V

TPD2EUSB30A

0

3.6

6.4 Thermal Information

THERMAL METRIC(1)

TPD2EUSB30

TPD2EUSB30A

TPD4EUSB30

UNIT

DRT (SOT)

DRT (SOT)

DQA (USON)

3 PINS

3 PINS

10 PINS

RθJA

Junction-to-ambient thermal resistance

610.2

610.2

162.2

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

288.0

288.0

128.3

°C/W

RθJB

Junction-to-board thermal resistance

118.4

118.4

56.7

°C/W

ψJT

Junction-to-top characterization parameter

20.2

20.2

13.8

°C/W

ψJB

Junction-to-board characterization parameter

116.4

116.4

56.6

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

N/A

8.1

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

TPD2EUSB30, TPD2EUSB30A, TPD4EUSB30

SLVSAC2G – AUGUST 2010 – REVISED JUNE 2021

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