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ADL8124ACPZN-R7 数据表(PDF) 1 Page - Analog Devices

部件名 ADL8124ACPZN-R7
功能描述  1GHz to 20GHz, Low Noise Amplifier with Integrated Temperature Sensor and Enable Function
PDF  29 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADL8124ACPZN-R7 数据表(HTML) 1 Page - Analog Devices

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Data Sheet
ADL8124
1GHz to 20GHz, Low Noise Amplifier with Integrated Temperature Sensor and
Enable Function
Rev. 0
DOCUMENT FEEDBACK
TECHNICAL SUPPORT
Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices
for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change
without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered
trademarks are the property of their respective owners. All Analog Devices products contained herein are subject to release and availability.
FEATURES
Single positive supply: 3.3V and IDQ of 55mA
RBIAS drain current adjustment pin
Integrated temperature sensor
Integrated enable and disable function
Gain: 15dB typical from 10GHz to 17GHz
OIP3: 29dBm typical from 10GHz to 17 GHz
Noise figure: 2.1dB typical from 10GHz to 17GHz
Extended operating temperature range: −55°C to +125°C
RoHS-compliant, 2mm × 2mm, 8-lead LFCSP
APPLICATIONS
Telecommunications
Test instrumentation
Military
GENERAL DESCRIPTION
The ADL8124 is a highly integrated, 1GHz to 20GHz, low noise am-
plifier (LNA). On-chip features include input and output AC coupling
capacitors, an integrated bias inductor, an integrated temperature
sensor, and an enable or disable pin (VENBL).
The typical gain and noise figure are 15dB and 2.1dB, respectively,
from 10GHz to 17GHz. The output power for 1dB compression
(OP1dB), output third-order intercept (OIP3), and output second-or-
der intercept (OIP2) are 15dBm, 29dBm, and 43dBm, respectively,
from 10GHz to 17GHz. The quiescent drain current (IDQ), which can
be adjusted, is 55mA operating from a 3.3V supply voltage (VDD).
Operation at 5V is also supported.
The ADL8124 is fabricated on a gallium arsenide (GaAs), pseudo-
morphic high electron mobility transistor (pHEMT) process. This
device is housed in an RoHS-compliant, 2mm × 2mm, 8-lead
LFCSP package and is specified for operation over an extended
temperature range of −55°C to +125°C.
FUNCTIONAL BLOCK DIAGRAM
Figure 1. Functional Block Diagram


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